The results indicated that the removal rate will increase with higher rotation speed and increasing loading pressure. Besides, higher polishing temperature will cause the higher removal rate and higher surface roughness and the slurry with 3wt% hydrogen peroxide has the highest removal rate for copper CMP process. | 中國機械工程學會第二十五屆全國學術研討會論文集 中華民國九十九年十一月二十一日、二十二日 大葉大學 彰化 大村 論文編號： Physical and chemical properties affected by temperature in copper films chemical mechanical polishing Shih-Jyun Liao1, NTai-Hao Kuo2 , Wen-Shan Lin2, Chia-Ling Liao2, Ssu-Hua Chien2, Trung Kien Vi 1 ,Tsung-Chieh 1* Cheng 1 Graduate Institute of Mechanical and Precision Engineering, National Kaohsiung University of Applied Science,Taiwan 2 Microsystems Technology Center，Industrial Technology Research Institute South，Taiwan Abstract Chemical mechanical polishing (CMP) of copper films in is one of the most essential processes for the manufacturing of semiconductor devices, nextgeneration compact 3D microelectronic devices and integrated microelectromechanical system with through holes plating. In this paper, we firstly discuss the thermal bending effect for CMP process of 4 inch p-type silicon wafers. In our experiment, surface roughness and removal rate increased with polishing temperature because of wafer thermal bending. In order to avoid thermal bending effect, the softer pad - 545N polishing cloth which is better than IC 1000 was used in our CMP experiments because of its better polishing selectivity. Therefore, we also use 545N polishing cloth to experiment with many important fabrication conditions which involve physical and mechanical mechanisms such as pad rotation speed, down force, temperature, pad types and chemical additive concentration. The results indicated that the removal rate will increase with higher rotation speed and increasing loading pressure. Besides, higher polishing temperature will cause the higher removal rate and higher surface roughness and the slurry with 3wt% hydrogen peroxide has the highest removal rate for copper CMP process. Keywords: chemical mechanical polishing, polishing temperature, thermal bending effect 1. Introduction The use of copper as an interconnect or wiring material in ultra large scale integration (ULSI) of microelectronic devices, vertical .
