In the heterojunction with intrinsic thin-layer (HIT) solar cell structure studied in this work, an intrinsic amorphous silicon (a-Si) layer followed by a n-type amorphous silicon was deposited on a p-type Czochralski (CZ) monocrystalline silicon (c-Si) wafer by plasma enhanced chemical vapor deposition (PECVD) method to form an heterojunction device. | Study on the deposition of amorphous silicon and ito thin films for heterojunction solar cell application