Plasmonic thin film InP/graphene-based Schottky-junction solar cell using nanorods

Herein, the design and simulation of graphene/InP thin film solar cells with a novel periodic array of nanorods and plasmonic back-reflectors of the nano-semi sphere was proposed. In this structure, a single-layer of the graphene sheet was placed on the vertical nanorods of InP to form a Schottky junction. The electromagnetic field was determined using solving three-dimensional Maxwell’s equations discretized by the finite difference method (FDM). The enhancement of light trapping in the absorbing layer was illustrated, thereby increasing the short circuit current to a maximum value of mA/cm2 with nanorods having a radius of 400 nm, height of 1250 nm, and nano-semi sphere radius of 50 nm, under a solar irradiation of . The maximum ultimate efficiency was determined to be for an angle of incidence of 60 . This structure has shown a very good light trapping ability when graphene and ITO layers were used at the top and as a back-reflector in the proposed photonic crystal structure of the InP nanorods. Thence, this structure improves the short-circuit current density and the ultimate efficiency of 12% and , respectively, in comparison with the InP-nanowire solar cells. | Plasmonic thin film InP/graphene-based Schottky-junction solar cell using nanorods

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