In this study, capacitance and conductance methods were used to investigate the charge traps at a HfO2/(100)InGaAs interface with an atomic layer deposition HfO2 layer doped with Al2O3 by co-deposition technique. The effect of Al doping on the quality of the HfO2/ interface will be evaluated. The density of interface traps (Dit) near midgap is close to 2×1012 cm−2eV−1. | Investigation of charge traps at al-doped HfO2/(100)InGaAs interface by using capacitance and conductance methods
