This paper reports on the design and characterization of class 4H-SiC PiN diodes with different active areas of 2, 8, and 24mm2 . Diodes edge termination is a combination of MESA and JTE. The blocking voltage of was achieved on the three types of diodes. Diodes operation stability is studied in term of temperature dependence and DC stress. In the limit of used package, these diodes present a stable operation until 225°C. The reverse leakage current at 225°C is less than 3µA at 3kV for 24mm2diodes. The forward voltage drop decreases with the increasing temperature but the voltage change is low, less than in the temperature range of (25°C - 225°C). After a DC stress under current density as high as , an important on-state forward voltage drift has been observed. This voltage drift is explained by the generation and prolongation of stacking-faults (SFs) which result in the reduction of carrier lifetime. | Electrical impact characterization of anode active area and stacking-faults in KV 4H-SIC PiN diodes
