This paper focuses on Monte Carlo simulations aimed at calculating the dose response of the RadFET dosimeter, when exposed to the complex CHARM mixed-fields, at CERN. We study how the dose deposited in the gate oxide (SiO2) of the RadFET is affected by the energy threshold variation in the Monte Carlo simulations as well as the materials and sizes of scoring volumes. | RadFET dose response in the CHARM mixed-field FLUKA MC simulations EPJ Nuclear Sci. Technol. 3 24 2017 Nuclear Sciences M. Marzo et al. published by EDP Sciences 2017 amp Technologies DOI epjn 2017016 Available online at http REGULAR ARTICLE RadFET dose response in the CHARM mixed-field FLUKA MC simulations Matteo Marzo Stefano Bonaldo Markus Brugger Salvatore Danzeca Ruben Garcia Alia Angelo Infantino and Adam Thornton CERN European Organization for Nuclear Research Geneva Switzerland Received 18 January 2017 Received in final form 16 May 2017 Accepted 19 June 2017 Abstract. This paper focuses on Monte Carlo simulations aimed at calculating the dose response of the RadFET dosimeter when exposed to the complex CHARM mixed-fields at CERN. We study how the dose deposited in the gate oxide SiO2 of the RadFET is affected by the energy threshold variation in the Monte Carlo simulations as well as the materials and sizes of scoring volumes. Also the characteristics of the input spectra will be taken into account and their impact on the final simulated dose will be studied. Dose variation as a function of the position of the RadFET in the test facility will be then examined and comparisons with experimental results will be shown. The contribution to the total dose due to all particles of the mixed-field under different target-shielding configurations is finally presented aiming at a complete characterization of the RadFETs dose response in the CHARM mixed-fields. 1 Introduction range had been identified between simulated and experi- mental values. In this paper we want to set up more We present Monte Carlo calculations of the dose response accurate simulations to investigate this mismatch. of the RADiation sensing Field Effect Transistors RadFET 1 4 when they are exposed to the radiation 2 CHARM and its mixed-field measurements environment at the CERN High Energy Accelerator vs. FLUKA simulations Mixed-field CHARM test facility 5 6 . The main purpose of the .
