The semiconductor diode laser chips AlGaAs of the matrix structure (linear bars arrays structure), having an output opticalpower of 2W were packaged at the semiconductor laser labrotary - Institute of Materials Science. We have studied some its properties such as: the temperature dependence of laser threshold, output optical power; the transfer heat of laser chip and pump current of laser. The study of spectral structure showed that the operating wavelength area of laser and structure of the longitudinal multimode depend on temperature and pump current. The above results allow to improve the packaging technology of the high power semiconductor laser chips, and then to open possibilities of its applications in Vietnam. | Special characteristics of high power semiconductor laser of matrix structure packaged in Vietnam
