This paper investigate the zero and finite temperature transport properties of a quasi-twodimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We consider the surface roughness, roughness-induced piezoelectric, remote charged impurity and homogenous background charged impurity scattering. The effects of the quantum well width, carrier density, temperature and localfield correction on resistance ratio are investigated. We also consider the dependence of the total mobility on the multiple scattering effect. | Transport properties of a GaAs InGaAs GaAs quantum well Temperature magnetic field and many-body effects
