The effects of strain on the diffusion of impurities in silicon crystal are investigated using the statistical moment method (SMM). The influence of tensile strain on diffusion coefficient D is characterized by relaxation volume V r and migration volume V m. The numerical results for B and P diffusion in silicon that are performed and compared to experimental data show good agreement. | JOURNAL OF SCIENCE OF HNUE Mathematical and Physical Sci. 2012 Vol. 57 No. 7 pp. 71-78 This paper is available online at http EFFECT OF STRAIN ON IMPURITY DIFFUSION IN SILICON Vu Van Hung1 and Phan Thi Thanh Hong2 1 Faculty of Physics Hanoi National University of Education 2 Faculty of Physics Hanoi University of Education Abstract. The effects of strain on the diffusion of impurities in silicon crystal are investigated using the statistical moment method SMM . The influence of tensile strain on diffusion coefficient D is characterized by relaxation volume V r and migration volume V m . The numerical results for B and P diffusion in silicon that are performed and compared to experimental data show good agreement. Keywords Diffusion coefficient tensile strain relaxation volume migration volume moment method. 1. Introduction When a material body is deformed it s shape and size are transformed the crystal lattice will undergo constant change and properties of the system such as thermal electrical and magnetic properties will be changed. In particular the deformation of an object will greatly effect the diffusion of atoms in the system. In recent years the effect of strain on the diffusion coefficient has attracted the attention of both theoretical and experimental scientists. Among other things they are looking at the diffusion of normal impurities such as B P As Sb in Si or SiGe alloy. A series of experimental observations and theoretical calculations performed by Aziz 1 Christensen 2 Johansson 3 and Dunham 4 indicate that the diffusion of B and P in silicon mediated by an interstitialcy mechanism and their diffusion coefficients increase with tensile strain and decrease with compression strain. And within the same range of temperatures the slope of the diffusion-strain curves is also different. Thus the diffusion of impurities in Si under the influence of strain is a problem that bears looking into. Received October 15 2011. Accepted September
