The study will focus on monitoring defects and finding out the nature of these defects. Bulk GaN was irradiated by a 2 MeV electron beam at a fluence of 5×1016 cm2 and studied by deep-level transient spectroscopy (DLTS). After irradiation, a broad peak, including at least two traps, was detected. The trap D1 (EC − eV) observed from a broad peak is induced during the annealing process below 550K and completely annealed out at 550K after 10 hours. | Communications in Physics Vol. 34 No. 1 2024 pp. 57-62 DOI https 0868-3166 19462 Thermal behavior of irradiation-induced-deep level in bulk GaN used for fabricating blue light emitting diodes Tran Thien Duc and Le Thi Hai Thanh Hanoi University of Science and Technology 1 Dai Co Viet Hai Ba Trung district 10000 Hanoi Vietnam E-mail Received 21 November 2023 Accepted for publication 14 December 2023 Published 21 February 2024 Abstract. Working in an irradiative environment can give rise to defects in GaN-based device defects induced by electron irradiation in thick free-standing GaN layers grown by halide va- por phase epitaxy were studied by deep level transient spectroscopy. The study will focus on monitoring defects and finding out the nature of these defects. Bulk GaN was irradiated by a 2 MeV electron beam at a fluence of 5 1016 cm2 and studied by deep-level transient spectroscopy DLTS . After irradiation a broad peak including at least two traps was detected. The trap D1 EC eV observed from a broad peak is induced during the annealing process below 550K and completely annealed out at 550K after 10 hours. The annealing process at 550K also forms a new trap D2 EC eV . From the isothermal study the activation energy of the trap D2 in the annihilation process is obtained and has a value of eV. The pre-factor of the annihilation process suggested this process to be related to the free-carrier capture by multi-phonon emission. From the thermal behavior trap D2 was suggested to be related to gallium vacancy. Keywords GaN DLTS defect irradiation. Classification numbers . 1. Introduction Recent developments within the field of optoelectronics and high-frequency devices have heightened the need for wide bandgap semiconductors such as SiC GaN AlN and InN 1 4 . Among them GaN has been known as the most suitable material for unique applications in light- emitting diodes .
