Tài liệu tham khảo microelectronic circuit design | MICROELECTRONIC CIRCUIT DESIGN Third Edition Richard C. Jaeger and Travis N. Blalock Answers to Selected Problems - Updated 1 25 08 Chapter 1 years years years years 113 MW 511 kA mV V V mV bit 100011102 A cos 10001 A vds 5 2 sin 25001 4 sin 10001 V V V pA 210 pA 120 pA 125 pA V Q v 56 kQ x 10 3 Vs MQ x 108 is 5 -45 100 -12 sin 750nt mV sin 750nt pA 1 R2 R1 V V Band-pass amplifier sin 2000n1 cos 8000 nl V 0 V 2970Q 3030Q 2850Q 3150Q 2700Q 3300Q 6200Q 800 ppm oC Chapter 2 For Ge cm3 227 x 1013 cm3 x 1015 cm3 cm s cm s A cm2 A cm2 K 4 MA cm2 x 107 A cm2 A K Donor acceptor 200 V cm 5 x 103 atoms 4 x 1016 cm3 x 105 cm3 18 3 3 9 3 -10 3 .28 6 x 10 cm cm 5 x 10 cm x 10 cm 3 x 1017 cm3 333 cm3 100 cm3 1018 cm3 375 cm2 s 100 cm2 s p-type mQ-cm 16 3 zx4 3 2 2 .34 10 cm 10 cm 800 cm s 1230 cm s n-type Q-cm x 1018 cm3 Yes add equal amounts of donor and acceptor impurities. Then n nt p but the mobilities are reduced. See Prob. . Q-cm x 1019 cm3 75K mV 150K mV 300K mV 400K mV x105 exp -5000 x cm A cm2 mA The width in the figure should be 2 pm For x 0 -535 A cm2 pm 2 Chapter 3 pm pm x 10-3 pm V x 105 V cm 3 Í 1 3 A- 3 18 3 -iz 2 _3 .3 10 cm 10 cm 10 cm 10 cm V pm V pm 6400 A cm2 x 1021 cm4 290 K 312K pA V V 0 A x 10 A x 10-18 A V V V V V V mV K V pm pm
