Classification, Depletion MOSFET, Enhancement MOSFET. | Chapter 4: FET Classification JFET Depletion MOSFET Enhancement MOSFET CMOS – chapter 5 Common configuration Biasing configuration - chapter 6 FET small signal analysis – chapter 9 Classification JFET-Junction Field Effect Transistor N-channel P-channel MOSFET-Metal Oxide Semiconductor FET Depletion—type: N and P channel Enhancement-type: N and P channel JFET Construction Operation Characteristic Transfer characteristics Specification sheets Important relationships JFET - Construction JFET - operation VGS=0, VDS>0 VGS=0 JFET - operation VGS0 VGS=0, VDS=VP JFET - characteristic IG=0A (dòng cực cổng) ID=IS (dòng cực phát = dòng cực nguồn). ID=IDSS(1-VGS/VGS(off))2 for JFET, DMOSFET (VGS(off)=VP) ID=k(VGS-VGSth)2 for EMOSFET, k=IDon/(VGSon-VT) JFET - characteristic P-channel, IDSS=6mA, VP=6V N-channel, IDSS=8mA, VP=-4V Datasheet-2N5457-maximum rating Rating Symbol Value Unit Drain-Source voltage VDS 25 Vdc Drain-Gate voltage VDG 25 Vdc Reverse G-S voltage VGSR -25 Vdc Gate . | Chapter 4: FET Classification JFET Depletion MOSFET Enhancement MOSFET CMOS – chapter 5 Common configuration Biasing configuration - chapter 6 FET small signal analysis – chapter 9 Classification JFET-Junction Field Effect Transistor N-channel P-channel MOSFET-Metal Oxide Semiconductor FET Depletion—type: N and P channel Enhancement-type: N and P channel JFET Construction Operation Characteristic Transfer characteristics Specification sheets Important relationships JFET - Construction JFET - operation VGS=0, VDS>0 VGS=0 JFET - operation VGS0 VGS=0, VDS=VP JFET - characteristic IG=0A (dòng cực cổng) ID=IS (dòng cực phát = dòng cực nguồn). ID=IDSS(1-VGS/VGS(off))2 for JFET, DMOSFET (VGS(off)=VP) ID=k(VGS-VGSth)2 for EMOSFET, k=IDon/(VGSon-VT) JFET - characteristic P-channel, IDSS=6mA, VP=6V N-channel, IDSS=8mA, VP=-4V Datasheet-2N5457-maximum rating Rating Symbol Value Unit Drain-Source voltage VDS 25 Vdc Drain-Gate voltage VDG 25 Vdc Reverse G-S voltage VGSR -25 Vdc Gate current IG 10 mAdc Device dissipation 250C Derate above 250C PD 310 mW mW/0C Junction temp range TJ 125 0C Storage channel temp range Tstg -60 to +150 0C Datasheet-2N5457-characteristics Characteristic Symbol Min Typ Max Unit VG-S breakdown V(BR)GSS -25 Vdc Igate reverse(Vgs=-15, Vds=0) IGSS nAdc VG-S cutoff VGS(off) Vdc VG-S VGS Vdc ID-zero gate volage IDSS mAdc Cin Ciss pF Creverse transfer Crss pF JFET-BJT relationship JFET BJT ID=IDSS(1-VGS/VP)2 IC=βIB ID=IS IC≈IE IG≈0 A VBE≈ V MOSFET Construction Operation Characteristic Transfer characteristics Specification sheets Special MOSFET: CMOS MOSFET - construction N-channel enhancement N-channel depletion MOSFET - operation N-channel enhancement VGS>0, VDS>0 N-channel depletion VGS=0, VDS>0 MOSFET – transfer characteristic N-channel enhancement N-channel depletion MOSFET – transfer characteristic P-channel enhancement P-channel depletion Datasheet-2N4351-Depletion MOS Characteristic
