Tuyển tập các báo cáo nghiên cứu khoa học trên tạp chí khoa học vật lý quốc tế đề tài: MORPHOLOGY STUDIES OF POROUS GaP, SYNTHESIZED BY LASER-INDUCED ETCHING | Journal of Physical Science Vol. 18 1 103-116 2007 103 MORPHOLOGY STUDIES OF POROUS GaP SYNTHESIZED BY LASER-INDUCED ETCHING Khalid M. Omar School of Physics Universiti Sains Malaysia 11800 USM Pulau Pinang Malaysia Corresponding author khalhadithi@ Abstract The laser-induced etching LIE has been proposed as an alternative technique. This LIE process is used to create GaP nanostructure. The studies of surface morphology of the reconstructed surface etched by laser-induced etching and the etching rate parameters have been investigated. The surface structure pits diameter and distribution have been illustrated by using a scanning electron microscopy SEM . Study of the effect of laser parameters on the surface morphology of the etched area such as different laser power densities and irradiation times has been made. Different structures have been produced for porous GaP. It is found that the pore walls become extremely thin and shorter at 12 W cm2 power density and 15 min irradiation time. Keywords GaP morphology LIE 1. INTRODUCTION The opto-electronic application of compound semiconductor materials has attracted extensive research and development activities over the last decade particularly in the area of quantum functional devices. Porosity has emerged as an effective tool for controlling electronic and optical properties of semiconductor quantum 2 Much research on semiconductors is focused on the characterization of surface effects which strongly affects the properties of a semiconductor. The quantum confinement effects are considered to control the mechanism of luminescence in nanocrystallites. The enhancement of luminescence efficiency is required because the band-to-band transition in the indirect band gap semiconductor material is extremely low. The reduction of size to a few nanometers has been used for the observation of efficient light emission by a modification in electronic optical and vibrational properties compared to the .
