Báo cáo hóa học: " High-precision, large-domain three-dimensional manipulation of nano-materials for fabrication nanodevices"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: High-precision, large-domain three-dimensional manipulation of nano-materials for fabrication nanodevices | Zou et al. Nanoscale Research Letters 2011 6 473 http content 6 1 473 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access High-precision large-domain three-dimensional manipulation of nano-materials for fabrication nanodevices Rujia Zou Li Yu Zhenyu Zhang Zhigang Chen and Junqing Hu Abstract Nanoscaled materials are attractive building blocks for hierarchical assembly of functional nanodevices which exhibit diverse performances and simultaneous functions. We innovatively fabricated semiconductor nano-probes of tapered ZnS nanowires through melting and solidifying by electro-thermal process and then as-prepared nanoprobes can manipulate nanomaterials including semiconductor metal nanowires and nanoparticles through sufficiently electrostatic force to the desired location without structurally and functionally damage. With some advantages of high precision and large domain we can move and position and interconnect individual nanowires for contracting nanodevices. Interestingly by the manipulating technique the nanodevice made of three vertically interconnecting nanowires . diode was realized and showed an excellent electrical property. This technique may be useful to fabricate electronic devices based on the nanowires moving positioning and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication. Keywords nano-probe ZnS nanowire manipulation TEM-STM nanodevices Introduction The main driving engine of the IT revolution has been geometrical miniaturization of transistors. This has been accomplished with a striking development in microfabrication technology referred to as Moore s law . the number of transistors on an integrated circuit IC doubles every 2 years and industrial guidelines enable multiple devices to be integrated within a given chip area 1 2 . For the past decade however the size of the microchips has remained roughly constant and we are approaching the atomic .

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