Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates | Zhong et al. Nanoscale Research Letters 2011 6 322 http content 6 1 322 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si 001 substrates Zhenyang Zhong Hua Gong Yingjie Ma Yongliang Fan and Zuimin Jiang Abstract Very small and compactly arranged GeSi nanowires could self-assembled on vicinal Si 001 substrates with 8 off toward J10 during Ge deposition. The nanowires were all oriented along the miscut direction. The small ration of height over width of the nanowire indicated that the nanowires were bordered partly with 1 0 5 facets. These self-assembled small nanowires were remarkably influenced by the growth conditions and the miscut angle of substrates in comparison with large dome-like islands obtained after sufficient Ge deposition. These results proposed that the formation of the nanowire was energetically driven under growth kinetic assistance. Three-dimensionally self-assembled GeSi nanowires were first realized via multilayer Ge growth separated with Si spacers. These GeSi nanowires were readily embedded in Si matrix and compatible with the sophisticated Si technology which suggested a feasible strategy to fabricate nanowires for fundamental studies and a wide variety of applications. PACS Introduction Semiconductor nanowires have attracted enormous attention as building blocks for nanoscale electronics 1 photonics 2 energy conversion and storage 3 4 thermoelectrics 5 and interfacing with living cells 6 thanks to their unique electronic optical and phonon properties 7 . In particular Si-based nanowires were broadly investigated due to their compatibility with the sophisticated Si technology 1 3-6 . The nanowires can be obtained by top-down methods 8 . They can also be fabricated by bottom-up methods including via vaporliquid-solid VLS process 9 via solution-liquid-solid SLS process 10 through .
