Báo cáo hóa học: " Spin-orbit interaction induced anisotropic property in interacting quantum wires"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Spin-orbit interaction induced anisotropic property in interacting quantum wires | Cheng et al. Nanoscale Research Letters 2011 6 213 http content 6 1 213 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Spin-orbit interaction induced anisotropic property in interacting quantum wires Fang Cheng1 2 3 Guanghui Zhou3 Kai Chang 2 We investigate theoretically the ground state and transport property of electrons in interacting quantum wires QWs oriented along different crystallographic directions in 001 and 110 planes in the presence of the Rashba spin-orbit interaction RSOI and Dresselhaus SOI DSOI . The electron ground state can cross over different phases . spin density wave charge density wave singlet superconductivity and metamagnetism by changing the strengths of the SOIs and the crystallographic orientation of the QW. The interplay between the SOIs and Coulomb interaction leads to the anisotropic dc transport property of QW which provides us a possible way to detect the strengths of the RSOI and DSOI. PACS numbers . Introduction All-electrical manipulation of spin degree of freedom is one of the central issues and the ultimate goal of spintronics field. The spin-orbit interaction SOI is a manifestation of special relativity. An electric field in the laboratory frame can transform into an effective magnetic field in the moving frame of electron and consequently leads to electron spin splitting. Therefore the SOI provides us an efficient way to control electron spin electrically and has attracted tremendous interest because of its potential application in all-electrical spintronic devices 1 2 . The spin degeneracy can be lifted by applying magnetic field to break the time-reversal symmetry and or by applying electric fields to break the spatial inversion symmetry. However the latter could be more easily realized in spintronics devices. In semiconductors the spatial inversion symmetry can be broken by the structural inversion asymmetry and bulk crystal .

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