Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Conductive-probe atomic force microscopy characterization of silicon nanowire | Alvarez et al. Nanoscale Research Letters 2011 6 110 http content 6 1 110 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Conductive-probe atomic force microscopy characterization of silicon nanowire 1 1 1 12 2 José Alvarez Irene Ngo Marie-Estelle Gueunier-Farret Jean-Paul Kleider Linwei Yu Pere Rocai Cabarrocas Simon Perraud3 Emmanuelle Rouvière3 Caroline Celle3 Céline Mouchet3 Jean-Pierre Simonato3 Abstract The electrical conduction properties of lateral and vertical silicon nanowires SiNWs were investigated using a conductive-probe atomic force microscopy AFM . Horizontal SiNWs which were synthesized by the in-plane solidliquid-solid technique are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime 1 V . Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence and the SiNWs resistivity was estimated. Introduction Silicon nanowires SiNWs are promising nanostructures which are expected to be integrated in building blocks for future microelectronics and optoelectronics devices 1-3 . Indeed multiple studies have already shown the great potential of SiNWs as functional element to develop transistors 4 biosensors 5 memory applications 6 and as electrical interconnects 7 . In addition SiNWs offer an interesting geometry for light trapping and carrier collection which gives place to intensive investigations in the photovoltaic field 8 9 . Several approaches and strategies exist to .
