Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: The Characteristics of Seebeck Coefficient in Silicon Nanowires Manufactured by CMOS Compatible Process | Nanoscale Res Lett 2010 5 1654-1657 DOI s11671-010-9690-2 NANO EXPRESS The Characteristics of Seebeck Coefficient in Silicon Nanowires Manufactured by CMOS Compatible Process Moongyu Jang Youngsam Park Myungsim Jun Younghoon Hyun Sung-Jin Choi Taehyoung Zyung Received 21 June 2010 Accepted 1 July 2010 Published online 18 July 2010 The Author s 2010. This article is published with open access at Abstract Silicon nanowires are patterned down to 30 nm using complementary metal-oxide-semiconductor CMOS compatible process. The electrical conductivities of n- p-leg nanowires are extracted with the variation of width. Using this structure Seebeck coefficients are measured. The obtained maximum Seebeck coefficient values are 122 V Kforp-leg and -94 V K for n-leg. The maximum attainable power factor is mW m K2 at room temperature. Keywords Thermoelectric effect Seebeck coefficient Silicon Nanowire Introduction Thermoelectric device interconverts thermal gradient and electricity for power generation or cooling 1-3 . Traditionally Bi2Te3 semiconductor has been widely used as thermoelectric material due to its high thermoelectric performance which has ZT a2ơT k 1 where a r K and T represent Seebeck coefficient electrical conductivity thermal conductivity and absolute temperature respectively 4 5 . However thermoelectric devices based on Bi2Te3 are difficult to miniaturize. In addition according to the late tendency of development and production of products using Bi2Te3 thermoelectric devices supplies of M. Jang Y. Park M. Jun Y. Hyun T. Zyung Electronics and Telecommunications Research Institute ETRI Taejon 305-700 Korea e-mail jangmg@ . Choi Korea Advanced Institute of Science and Technology KAIST Taejon 305-701 Korea Bi2Te3 are predicted to face shortage soon. On the contrary silicon is the most abundant semiconductor material with the matured fabrication infrastructure. One drawback in the consideration of silicon as .
