Thành phần phù hợp và bảo vệ từ phóng tĩnh điện được thiết kế thực hành quan trọng. Chính xác phù hợp với thành phần làm giảm chi phí và cải thiện chức năng mạch. Bảo vệ khỏi phóng tĩnh điện là một đề phòng cần thiết cho độ tin cậy. | Figure Figure for problem 9. What is the position of the Fermi level relative to the intrinsic level on the p-side of the junction 7. For the pn junction in problem 6 the junction area is 10 microns by 10 microns. What is the saturation current Is. Use mobility vs doping curves Figure . 8. Consider a pn junction with the P-side doped with Na 1020 cm--3. Approximately what is the required doping on the N-side to obtain a breakdown of 20 V Use the one-sided step junction approximation. 9. A 10 K resistor is in series with an NMOS transistor as shown in Figure W L pnCox 10 5. The threshold voltage is one volt. What is the output voltage Vo References 1 S. M. Sze and J. C. Irvin Resistivity Mobility and Impurity Levels in GaAs Ge and Si at 300PK Solid-State Electronics Vol 11 pp. 599-602 1968. 2 S. M. Sze Physics of Semiconductor Devices Wiley-Interscience New York 1969. 3 Edward S. Yang Microelectronic Devices McGraw-Hill New York 1988. 4 . Gray and . Meyer Analysis and Design of Analog Integrated Circuits 2nd edition Wiley New York c. 1984 pp. 1-5. 5 . Muller and . Kamins Device Electronics for Integrated Circuits 2nd edition Wiley New York c. 1986 pp. 15-27 173-188 235-244. 6 K. Lee M. Shur . Fjeldy and T. Ytterdal Semiconductor Device Modeling for VLSI Prentice Hall Englewood Cliffs NJ c. 1993 p. 63. 7 Shelby Raymond private communication January 1999. chapter 2 Device Models Introduction Models are mathematical descriptions that predict performance. They can be physical or empirical. Physical models are based on device physics and can be related to physical properties. Empirical models fit measurements to mathematical descriptions that do not necessarily correspond to device physics. Physical models are easier to adapt when parameters such as doping levels or device dimensions change. Modeling is a tradeoff between accuracy and utility. Exact models tend to be more complex than approximate ones. The model to use is the simplist one
