Báo cáo hóa học: " Electronic Structure of a Hydrogenic Acceptor Impurity in Semiconductor Nano-structures"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Electronic Structure of a Hydrogenic Acceptor Impurity in Semiconductor Nano-structures | Nanoscale Res Lett 2007 2 554-560 DOI S11671-007-9098-9 NANO EXPRESS Electronic Structure of a Hydrogenic Acceptor Impurity in Semiconductor Nano-structures Shu-Shen Li Jian-Bai Xia Received 7 September 2007 Accepted 21 September 2007 Published online 9 October 2007 to the authors 2007 Abstract The electronic structure and binding energy of a hydrogenic acceptor impurity in 2 1 and 0-dimensional semiconductor nano-structures . quantum well QW quantum well wire QWW and quantum dot QD are studied in the framework of effective-mass envelopefunction theory. The results show that 1 the energy levels monotonically decrease as the quantum confinement sizes increase 2 the impurity energy levels decrease more slowly for QWWs and QDs as their sizes increase than for QWs 3 the changes of the acceptor binding energies are very complex as the quantum confinement size increases 4 the binding energies monotonically decrease as the acceptor moves away from the nano-structures center 5 as the symmetry decreases the degeneracy is lifted and the first binding energy level in the QD splits into two branches. Our calculated results are useful for the application of semiconductor nano-structures in electronic and photoelectric devices. Introduction Impurity states play a very important role in the semiconductor revolution. Hydrogenic impurities including donors . Li . Xia CCAST World Lab. P. O. Box 8730 Beijing 100080 . China . Li H . Xia State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences P. O. Box 912 Beijing 100083 . China e-mail sslee@ and acceptors have been widely studied in theoretical and experimental approaches 1 . Recently Mahieu et al. investigated the energy and symmetry of Zn and Be dopant-induced acceptor states in GaAs using cross-sectional scanning tunneling microscopy and spectroscopy at low temperatures 2 . The ground and first excited states were found to have

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