The electron (hole) energy and uncorrelated 1Se − 1Sh electron-hole transition in Core(GaN)| well(InxGa1−xN)| shell(GaN) spherical QDQW nanoparticles are investigated as a function of the inner and the outer radii. The calculations are performed within the framework of the effective-mass approximation and the finite parabolic potential confinement barrier in which two confined parameters are taking account. The Indium composition effect is also investigated. A critical value of the outer and the inner ratio is obtained which constitutes the turning point of two indium composition behaviors. | Communications in Physics, Vol. 23, No. 2 (2013), pp. 127-133 UNCORRELATED ELECTRON-HOLE TRANSITION ENERGY IN GaN|InGaN|GaN SPHERICAL QDQW NANOPARTICLES HADDOU EL GHAZI LPS, Faculty of science, Dhar EL Mehrez, BP 1796 Fes-Atlas, Morocco and Special mathematics, CPGE K´enitra, Chakib Arsalane Street, Morocco Email: hadghazi@; Phone: (+212) 655194137 ANOUAR JORIO AND IZEDDINE ZORKANI LPS, Faculty of science, Dhar EL Mehrez, BP 1796 Fes-Atlas, Morocco Received 04 March 2013; revised manuscript received 03 April 2013 Accepted for publication 08 May 2013 Abstract. The electron (hole) energy and uncorrelated 1Se − 1Sh electron-hole transition in Core(GaN)| well(Inx Ga1−x N)| shell(GaN) spherical QDQW nanoparticles are investigated as a function of the inner and the outer radii. The calculations are performed within the framework of the effective-mass approximation and the finite parabolic potential confinement barrier in which two confined parameters are taking account. The Indium composition effect is also investigated. A critical value of the outer and the inner ratio is obtained which constitutes the turning point of two indium composition behaviors. I. INTRODUCTION During the past few decades, quantum dot-quantum well (QDQW) nanoparticles have attracted much interest due to their importance in physics, electronic and optical applications [1–5]. The so-called QDQW nanoparticles are typically the spherical core-shell three-layer heterostructures composed of two different materials, in which the material with the smaller bulk band gap is embedded between a core and an outer shell made of the larger band gap material. This structure can be treated as a complicated QD semiconductor with a smaller band gap layer in its core acting as an internal well. This structure gives rise to a significant redistribution of the carriers. The nanoparticles QDQW provide a flexibility to tailor electron and hole characteristics by changing the core radius, the thickness of the
