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Silicon Carbide Materials Processing and Applications in Electronic Devices Part 16

Tham khảo tài liệu 'silicon carbide materials processing and applications in electronic devices part 16', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | 515 Compilation on Synthesis Characterization and Properties of Silicon and Boron Carbonitride Films h. V Ekin EBV k 9 where h.v irradiation energy Ekin energy of the emitting electron and EBV k binding energy. The determination of the different binding energies of an element in a sample is the most important power of XPS. It is stated by the chemical shift in comparison to a pure substance. For fixing the energy resolution over the total measuring region the electrons are limited to a constant velocity before their entrance into the analyzer pass energy . 4.13 Transmission Electron Microscopy TEM In transmission electron microscopy TEM an electron beam is transmitted through an ultra thin sample. An image is formed from the interaction e.g. absorption diffraction of the electrons with the specimen. The electrons are guided through an expanded electron optical column. The imaging device is a fluorescent screen a photographic film or a CCD camera Fultz Howe 2007 Rose 2008 . The analytical power of a TEM is described by the resolution properties By reduction of spherical aberrations a magnification of 50 million times resolution 0.5 Ấ 50 pm is reached. The ability to determine the position of atoms has made the high-resolution TEM HRTEM an indispensable tool for nanotechnology research including heterogeneous catalysis and the development of semiconductor devices for electronics and photonics O Keefe Allard 2004 . High quality samples will have a thickness of only a few tens of nanometers. Preparation of TEM specimen is specific to the material under analysis. Some of the methods for preparing such samples are Tissue sectioning by a microtome sample staining mechanical milling chemical etching and ion etching sputtering . Recently focussed ion beams FIB have been used for sample preparation Baram Kaplan 2008 . For measurement of the fine structure of absorption edges to determine chemical differences in nano structures electron energy loss spectroscopy EELS can be .