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báo cáo hóa học: " InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy | Liu et al. Nanoscale Research Letters 2011 6 442 http www.nanoscalereslett.eom content 6 1 442 o Nanoscale Research Letters a SpringerOpen Journal NANO IDEA Open Access InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy 1 13 2 1 3 1 Kuang-Wei Liu Shoou-Jinn Chang Sheng-Joue Young Tao-Hung Hsueh Hung Hung Yu-Chun Mai Shih-Ming Wang3 Kuan-Jen Chen3 Ya-Ling Wu4 and Yue-Zhang Chen4 Abstract The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si 111 substrate it was found that we could reduce strain form Si by inserting CrN nanoisland FWHM of the x-ray rocking curve measured from InN nanorods from 3 299 reduced to 2 115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure however the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN by these results we can speculate the growth mechanism of baseball-bat-like InN nanorods. Introduction Recently indium nitride InN has attracted much attention due to its narrow band-gap energy i.e. around 0.7 eV existence of a surface accumulation layer low electron effective mass high carrier mobility and high saturation velocity. These properties make InN a potentially useful material for the fabrication of high-electron-mobility transistors high frequency devices and fullspectrum solar cells 1-3 . However the growth of high-quality InN films is difficult due to the lack of suitable substrates. It has been shown that hetero epitaxy of InN films on sapphire or Si often results in a high density of threading dislocation due to the mismatches in lattice constant and thermal expansion coefficient. This can be solved by growing one-dimensional 1D InN nanorods which are less .