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báo cáo hóa học: " Topological confinement in an antisymmetric potential in bilayer graphene in the presence of a magnetic field"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Topological confinement in an antisymmetric potential in bilayer graphene in the presence of a magnetic field | o Nanoscale Research Letters a SpringerOpen Journal Zarenia et al. Nanoscale Research Letters 2011 6 452 http www.nanoscalereslett.eom content 6 1 452 NANO EXPRESS Open Access Topological confinement in an antisymmetric potential in bilayer graphene in the presence of a magnetic field 1 2 1.2 2 Mohammad Zarenia Joao Milton Pereira Jr Frangois Maria Peeters 1 and Gil de Aquino Farias Abstract We investigate the effect of an external magnetic field on the carrier states that are localized at a potential kink and a kink-antikink in bilayer graphene. These chiral states are localized at the interface between two potential regions with opposite signs. PACS numbers 71.10.Pm 73.21.-b 81.05.Uw Introduction Carbon-based electronic structures have been the focus of intense research since the discovery of fullerenes and carbon nanotubes 1 . More recently the production of atomic layers of hexagonal carbon graphene has renewed that interest with the observation of striking mechanical and electronic properties as well as ultrarelativistic-like phenomena in condensed matter systems 2-4 . In that context bilayer graphene BLG which is a system with two coupled sheets of graphene has been shown to have features that make it a possible substitute of silicon in microelectronic devices. The carrier dispersion of pristine BLG is gapless and approximately parabolic at two points in the Brillouin zone K and K . However it has been found that the application of perpendicular electric fields produced by external gates deposited on the BLG surface can induce a gap in the spectrum. The electric field creates a charge imbalance between the layers which leads to a gap in the spectrum 5 6 . The tailoring of the gap by an external field may be particularly useful for the development of devices. It has been recently recognized that a tunable energy gap in BLG can allow the observation of new confined electronic states 7 8 which could be obtained by applying a spatially varying potential profile .