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Electrical Properties Of Nb-Doped TiO2 Thin Films Deposited By Co-sputtering Process

Nb-doped TiO2 thin films were fabricated by co-sputtering of TiO2 doped 6%wt by Nb2O5and Nb targets. The anatase polycrystalline thin films were obtained by post-annealing at 350oC in vacuum atmosphere. The electrical properties of the film were determined by the Hall method using standard clove-leaf geometry. | VNU Journal of Science: Mathematics – Physics, Vol. 33, No. 3 (2017) 44-50 Electrical Properties Of Nb-Doped TiO2 Thin Films Deposited By Co-sputtering Process Hoang Ngoc Lam Huong*, Nguyen Minh Hieu, Nguyen Thi Tien, Nguyen Tran Thuat, Nguyen Hoang Luong Faculty of Physics, VNU University of Science, 334 Nguyen Trai, Hanoi, Vietnam Received 12 March 2017 Revised 20 April 2017; Accepted 15 September 2017 Abstract: Nb-doped TiO2 thin films were fabricated by co-sputtering of TiO2 doped 6%wt by Nb2O5and Nb targets. The anatase polycrystalline thin films were obtained by post-annealing at 350oC in vacuum atmosphere. The electrical properties of the film were determined by the Hall method using standard clove-leaf geometry. The results indicated that: when the Nb concentration increases followed by the numbers of electrons increase from 4×1018 cm-3 to 2.4×1020 cm-3. Meanwhile the resistivity fall down from 10 to 3.5×10-3 Ωcm. It means that this co-sputtering process is good method to improve conducting properties of Nb:TiO2 thin film. With low resistivity and high optical transmittance (higher than 80% in the visible range), the fabricated thin film can be applicable for transparent conducting electrodes. Keywords: Nb-doped TiO2, TNO thin film, co-sputtering method, transparent conducting. 1. Introduction Transparent conducting oxides (TCOs) are among the key materials supporting optoelectronics technology [1], and sputter-deposited Sn-doped In2O3 (ITO) has been widely used as a practical TCO material because of its excellent resistivity ρ (~2 × 10-4Ωcm) and transparency in the visible region [2]. However, rapid growth of new optoelectronic devices, including blue light-emitting diodes, vertical cavity surface emitting lasers (VCSEL) and solar cells, requires the development of new TCOs with unique properties that conventional TCOs do not possess, such as high work function and durability against atomic hydrogen [3]. In addition, effort for the development of new .