Đang chuẩn bị liên kết để tải về tài liệu:
Demonstration on ferroelectric-gate thin film transistor NAND-type array with disturbance free operation

Không đóng trình duyệt đến khi xuất hiện nút TẢI XUỐNG

A novel concept of NAND memory array has been proposed by using only ferroelectricgate thin film transistors (FGTs), whose structure is constructed from a sol-gel ITO channel and a sol-gel stacked ferroelectric between Bi3.25La0.75Ti3O12 and PbZr0.52TiO0.48O3 (BLT/PZT) gate insulator. | Demonstration on ferroelectric-gate thin film transistor NAND-type array with disturbance free operation

TÀI LIỆU LIÊN QUAN

Impact of front line demonstration on the yield and economics of coriander in Kota district of Rajasthan, India

Study on production potential of rice through front line demonstration in Deoria district of Uttar Pradesh, India

Evaluation of front line demonstration trials on clusterbean in Nagaur district of Rajasthan, India

Impact of frontline demonstration on the yield and economics of chickpea (Cicer arietinum L.) production in Rajkot district of Gujarat

Performance of front line demonstration on yield enhancement of mustard in Barmer district of Rajasthan

Impact of front line demonstration on yield and economics of pigeon pea, cajanus cajan in the district of Ramanagara, Karnataka, India

Evaluation of cluster front line demonstration on black gram in sawai Madhopur district of Rajasthan, India

Impact of frontline demonstration programme on the yield of chickpea (Cicer arietinum L.) in Mandla district of Madhya Pradesh, India

Farmer’s perception on economics and varietal performance of high yielding multicut napier fodder – DHN-6: Result of front line demonstration in Ramanagar district, Karnataka, India

Performance evaluation of cluster front line demonstration in black gram
Đã phát hiện trình chặn quảng cáo AdBlock
Trang web này phụ thuộc vào doanh thu từ số lần hiển thị quảng cáo để tồn tại. Vui lòng tắt trình chặn quảng cáo của bạn hoặc tạm dừng tính năng chặn quảng cáo cho trang web này.