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High quality of gan film growth on atomically stepped lithium niobate (LiNbO3) substrates using molecular beam epitaxy (MBE)

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High temperature thermal treatment has been used to obtain atomically flat surfaces and to remove surface damage caused by mechanical polishing of as-received lithium niobate (LiNbO3) substrates. Annealing at 1000 ◦C for 2 hours produces optimal surface smoothness. The micro steps are nearly parallel and periodic almost all over the sample. |

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