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Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

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We present a performance enhancement evaluation of n þ doped graded InGaN drain/source regionbased HfO2/InAlN/AlN/GaN/AlN on SiC metal-oxide-semiconductor high electron mobility transistor (MOS-HEMTs) with a T-shaped gate. Impact on the device characteristics with the inclusion of a HfO2 surface passivation layer and an AlN buffer layer in the MOS-HEMT structure as a performance booster has been analyzed for the HEMT device with 30 nm gate length using Silvaco ATLAS TCAD. |