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Summary of the PhD thesis Theoretical and mathematical physics: Electronic transport in semiconductor nanostructure based on polar material AlGaN/GaN and Penta-Graphene nanoribbon

The purposes of research "Electronic transport in semiconductor nanostructure based on polar material AlGaN/GaN and Penta-Graphene nanoribbon" studying on electronic transport phenomena in semiconductor nano structures such as AlGaN/GaN and penta-graphene nanoribbon. | MINISTRY OF EDUCATION VIETNAM ACADEMY OF AND TRAINING SCIENCE AND TECHNOLOGY GRADUATE UNIVERSITY SCIENCE AND TECHNOLOGY . . PHAM THI BICH THAO ELECTRONIC TRANSPORT IN SEMICONDUCTOR NANOSTRUCTURE BASED ON POLAR MATERIAL AlGaN GaN AND PENTA-GRAPHENE NANORIBBON Speciality Theoretical and mathematical physics Code 9 44 01 03 SUMMARY OF THE PHD THESIS Ha Noi 2020 This thesis was completed at Graduate University of Science and Technology Vietnam Academy of Science and Technology Supervisors Assoc. Prof. Dr. Nguyen Thanh Tien Prof. Dr. Doan Nhat Quang Referee 1 Assoc. Prof. Dr. Dinh Van Trung Referee 2 Prof. Dr. Dao Tien Khoa Referee 3 Dr. Pham Ngoc Dong This dissertation will be defended in front of the evaluating assembly at academy level place of defending meeting room Graduate University of Science and Technology Vietnam Academy of Science and Technology. This thesis can be studied at - The Library of Graduate University of Science and Technology - The Vietnam National Library 1 Introduction Nowadays semiconductor technology is one of the most important fields in the development of science and technology. Semiconductor technology is a foundation of the information society that has been motivating human so- ciety forward by changing in production living communication and even in human. In semiconductor technology semiconductor materials play a cru- cial role. The first transistor was invented in 1947 based on germanium Ge semiconductor with a band gap at room temperature of 0.66 eV. The first integrated circuit was born in 1958 and the bulk integrated circuit appeared in 1961 using germanium and silicon Si with a band gap of 1.12 eV. Since 1965 silicon has become the main material for semiconductor integrated circuits. Today most semiconductor integrated circuit or photovoltaic in- dustries are still based on silicon. Silicon and germanium are often referred as the first generation of semi- conductors. The second generation including gallium arsenide GaAs band gap at