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Thermal behavior of irradiation-induced-deep level in bulk GaN used for fabricating blue light emitting diodes

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The study will focus on monitoring defects and finding out the nature of these defects. Bulk GaN was irradiated by a 2 MeV electron beam at a fluence of 5×1016 cm2 and studied by deep-level transient spectroscopy (DLTS). After irradiation, a broad peak, including at least two traps, was detected. The trap D1 (EC −0.16 eV) observed from a broad peak is induced during the annealing process below 550K and completely annealed out at 550K after 10 hours. | Communications in Physics Vol. 34 No. 1 2024 pp. 57-62 DOI https doi.org 10.15625 0868-3166 19462 Thermal behavior of irradiation-induced-deep level in bulk GaN used for fabricating blue light emitting diodes Tran Thien Duc and Le Thi Hai Thanh Hanoi University of Science and Technology 1 Dai Co Viet Hai Ba Trung district 10000 Hanoi Vietnam E-mail duc.tranthien@hust.edu.vn thanh.lethihai@hust.edu.vn Received 21 November 2023 Accepted for publication 14 December 2023 Published 21 February 2024 Abstract. Working in an irradiative environment can give rise to defects in GaN-based device defects induced by electron irradiation in thick free-standing GaN layers grown by halide va- por phase epitaxy were studied by deep level transient spectroscopy. The study will focus on monitoring defects and finding out the nature of these defects. Bulk GaN was irradiated by a 2 MeV electron beam at a fluence of 5 1016 cm2 and studied by deep-level transient spectroscopy DLTS . After irradiation a broad peak including at least two traps was detected. The trap D1 EC 0.16 eV observed from a broad peak is induced during the annealing process below 550K and completely annealed out at 550K after 10 hours. The annealing process at 550K also forms a new trap D2 EC 0.25 eV . From the isothermal study the activation energy of the trap D2 in the annihilation process is obtained and has a value of 1.3 0.3 eV. The pre-factor of the annihilation process suggested this process to be related to the free-carrier capture by multi-phonon emission. From the thermal behavior trap D2 was suggested to be related to gallium vacancy. Keywords GaN DLTS defect irradiation. Classification numbers 61.80.Ba 79.10.na. 1. Introduction Recent developments within the field of optoelectronics and high-frequency devices have heightened the need for wide bandgap semiconductors such as SiC GaN AlN and InN 1 4 . Among them GaN has been known as the most suitable material for unique applications in light- emitting diodes .