Đang chuẩn bị liên kết để tải về tài liệu:
Báo cáo hóa học: " Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application | Sahu et al. Nanoscale Research Letters 2011 6 177 http www.nanoscalereslett.eom content 6 1 177 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2 SiO2 stack tunnel dielectrics for memory application 1 2 1 1 1 2 Bhabani Shankar Sahu Florence Gloux Abdelilah Slaoui Marzia Carrada Dominique Muller Jesse Groenen Caroline Bonafos2 Sandrine Lhostis3 Abstract Ge nanocrystals Ge-NCs embedded in SiN dielectrics with HfO2 SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy 5 keV ion implantation method followed by conventional thermal annealing at 800 C the key variable being Ge ion implantation energy. Two different energies 3 and 5 keV have been chosen for the evolution of Ge-NCs which have been found to possess significant changes in structural and chemical properties of the Ge -implanted dielectric films and well reflected in the charge storage properties of the Al SiN Ge-NC SiN HfO2 SiO2 Si metal-insulator-semiconductor MIS memory structures. No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of 1.5 X 1016 cm-2 whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted 5 keV sample for the same implanted dose. The MIS memory structures implanted with 5 keV exhibits better charge storage and retention characteristics compared to the low-energy-implanted sample indicating that the charge storage is predominantly in Ge-NCs in the memory capacitor. A significant memory window of 3.95 V has been observed under the low operating voltage of 6 V with good retention properties indicating the feasibility of these stack structures for low operating voltage non-volatile memory devices. Introduction During the last decade non-volatile memory NVM structures consisting of semiconductor nanocrystals NCs in particular Si and Ge-NCs embedded .