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Báo cáo hóa học: " High-efficiency GaAs and GaInP solar cells grown by all solid-state Molecular-Beam-Epitaxy"

Tuyển tập các báo cáo nghiên cứu về hóa học được đăng trên tạp chí hóa hoc quốc tế đề tài : High-efficiency GaAs and GaInP solar cells grown by all solid-state Molecular-Beam-Epitaxy | Lu et al. Nanoscale Research Letters 2011 6 576 http www.nanoscalereslett.eom content 6 1 576 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access High-efficiency GaAs and GalnP solar cells grown by all solid-state Molecular-Beam-Epitaxy 1 1111 2 2 2 Shulong Lu Lian Ji Wei He Pan Dai Hui Yang Masayuki Arimochi Hiroshi Yoshida Shiro Uchida and Masao Ikeda2 Abstract We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy MBE technique. For GaAs single-junction solar cell with the application of AlInP as the window layer and GaInP as the back surface field layer the photovoltaic conversion efficiency of 26 at one sun concentration and air mass 1.5 global AM1.5G is realized. The efficiency of 16.4 is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell. Introduction The efficiency of III-V compound semiconductor of GaAs and GalnP solar cells continues to improve with the optimized material quality and device processing. Taking into account of the material quality only to date the highest performance has been realized for the materials grown by metal-organic chemical vapor deposition MOCVD 1-3 . It is normally believed that the efficiency of solar cell fabricated by the materials grown by molecular-beam-epitaxy MBE is lower than that of MOCVD growth 4 5 though MBE has been proved to be an effective tool for the basic research with its own unique advantage 6 . One of the main obstacles for the MBE-grown solar cell is considered to be the more defect states and deep centers due to the low growth temperature. In addition the operation of phosphide-related material growth by using MBE is still thought to be a complicated task owing to its high evaporation pressure of phosphide especially the GaInP film has been .