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Báo cáo hóa học: " Scanning tip measurement for identification of point defects"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Scanning tip measurement for identification of point defects | Dózsa et al. Nanoscale Research Letters 2011 6 140 http www.nanoscalereslett.eom content 6 1 140 o Nanoscale Research Letters a SpringerOpen Journal NANO REVIEW Open Access Scanning tip measurement for identification of point defects 1 12 2 1 3 László Dózsa Gyorgy Molnár Vito Raineri Filippo Giannazzo János Ferencz Stefan Lányi Abstract Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage current-voltage and deep level transient spectroscopy DLTS were used to measure the electrical properties of Au silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy SCM were applied to measure local electrical properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction. In the Fe-deposited area Fe-related defects dominate the surface layer in about 0.5 pm depth. These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area Fe-related defect concentration was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM. Introduction Nanostructures require investigation of local electrical characteristics with high spatial resolution 1 . Nondestructive measurement of the surface and the interfaces is critical in SOI materials 2 such techniques are technologically important in characterization of growth processes 3 and in measurement of dielectric layers 4 . Defect identification was investigated in detail using few millimeter size electrodes 5 . Metal silicide films have attracted attention because of their scientific curiosity and technical importance 6 . Fe is a critical contamination in silicon and investigation of the defects related to Fe is technologically important. In earlier .