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Báo cáo hóa học: " n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: In-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires | Gutsche et al. Nanoscale Res Lett 2011 6 65 http www.nanoscalereslett.eom content 6 1 65 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires Christoph Gutsche Andrey Lysov Ingo Regolin Kai Blekker Werner Prost Franz-Josef Tegude Abstract In this letter n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on 111 B GaAs substrates is reported. A low growth temperature of 400 C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run the donor concentrations ND of GaAs nanowires are found to vary from 7 X 1017 cm-3 to 2 X 1018 cm-3. The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices. Introduction Novel quasi one-dimensional structures like III-V semiconductor nanowires may act as key elements in future nanoscaled optoelectronic devices 1-3 . They offer intriguing electrical and optoelectronic properties and the ability to combine material systems that are impossible in conventional semiconductor layer growth due to lattice mismatch issues 4 . The large surface to volume ratio which is already utilized in nanowire sensor applications 5 6 allows to improve light extraction and light collections when compared to planar devices making especially nanowires ideal candidates for light emitters and photo voltaics 7-9 . However the future of any semiconductor nanowire technology will inherently rely on their doping capability. Only this way the .