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Báo cáo hóa học: " CMOS Silicon-on-Sapphire RF Tunable Matching Networks"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: CMOS Silicon-on-Sapphire RF Tunable Matching Networks | Hindawi Publishing Corporation EURASIP Journal on Wireless Communications and Networking Volume 2006 Article ID 86531 Pages 1-11 DOI 10.1155 WCN 2006 86531 CMOS Silicon-on-Sapphire RF Tunable Matching Networks Ahmad Chamseddine 1 2 James W. Haslett 1 2 and Michal Okoniewski1 2 1 Department of Electrical and Computer Engineering University of Calgary Calgary AB Canada T2N1N4 2 TRLabs Department of Electrical and Computer Engineering University of Calgary Calgary AB Canada T2L 2K7 Received 28 October 2005 Accepted 9 January 2006 This paper describes the design and optimization of an RF tunable network capable of matching highly mismatched loads to 50 n at 1.9 GHz. Tuning was achieved using switched capacitors with low-loss single-transistor switches. Simulations show that the performance of the matching network depends strongly on the switch performances and on the inductor losses. A 0.5 pm silicon-on-sapphire SOS CMOS technology was chosen for network implementation because of the relatively high-quality monolithic inductors achievable in the process. The matching network provides very good matching for inductive loads and acceptable matching for highly capacitive loads. A 1 dB compression point greater than 15 dBm was obtained for a wide range of load impedances. Copyright 2006 Ahmad Chamseddine et al. This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use distribution and reproduction in any medium provided the original work is properly cited. 1. INTRODUCTION Matching impedance networks have become ubiquitous in all radio-frequency RF transmitters and receivers especially in wireless mobile devices such as handheld computers PDs and cellular phones. Fixed matching networks are inserted between the power amplifier PA module and the antenna. However antenna input impedance is affected by the presence of surrounding objects 1-4 and can vary considerably with the antenna close to the human body or with